用电测量法正确测定n-GaSb中的电子浓度

Y. Parkhomenko, A. Belov, E. V. Molodtsova, R. Kozlov, S. S. Kormilitsina, E. Zhuravlev
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摘要

考虑到导带形状的非抛物线偏差,计算了295和77 K时n-GaSb中导电电子的浓度。我们发现,在T = 295 K时,导带l -谷中的重电子浓度高于Г-valley中的轻电子浓度。相反,在T = 77 K时,传导电子主要集中在Г-valley中。已经报道了掺碲CZ - n-GaSb样品的霍尔数据。分析T = 295 K的实验数据需要考虑两种电子的存在(轻电子和重电子),它们的浓度无法确定。电子浓度随温度从295到77 K的降低而明显增加的说法是不正确的。在T = 77 K时,用霍尔方法可以准确地测量导电电子的浓度。
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Correct determination of electron concentration in n-GaSb by electrical measurements
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking into account the non-parabolic deviation of the conduction band shape. We show that at T = 295 K the concentration of heavy electrons in the L-valley of the conduction band is higher than the concentration of light electrons in the Г-valley. On the contrary, at T = 77 K the conduction electrons are mostly concentrated in the Г-valley. Hall data for tellurium doped CZ n-GaSb specimens have been reported. Analysis of experimental data for T = 295 K requires the existence of two types of electrons be taken into account (the light and the heavy ones), the concentrations of which cannot be determined. The apparent increase in the electron concentration with a decrease in the temperature from 295 to 77 K is not true. The concentration of conduction electrons at T = 77 K can be measured correctly with the Hall method.
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