纳秒级Gunn振荡器的相位稳定性

V. Kozhevnikov, A. Kozyrev, V. Konev, A. Klimov
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引用次数: 0

摘要

介绍/目的:为了研究电动力不耦合Gunn振荡器的相位稳定性问题,进行了详细的理论和实验研究。方法:在GaAs - Gunn二极管半导体有源区非线性一维理论模型的框架下,采用计算机模拟的方法研究了调制脉冲不稳定性的影响。实验观测包括微波测量和天线远场估计。他们证实了主要的理论结果,并扩展了关键的工作结论。结果表明:Gunn振荡器微波振荡的初始相位与半导体结构内部噪声无关,仅通过调制电压脉冲即可固定。结论:基于gunn二极管的微波振荡器可以利用调制电源的电压脉冲前缘进行稳定。这些结果为设计基于无互反馈(电动力学无关)的Gunn振荡器的天线相控阵开辟了广阔的前景。
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The phase stability of nanosecond Gunn oscillators
Introduction/purpose: Detailed theoretical and experimental studies have been carried out in order to investigate the problem of a phase stability in electrodynamically uncoupled Gunn oscillators. Methods: The influence of modulating pulse instabilities has been investigated by means of computer simulation in the framework of a nonlinear one-dimensional theoretical model of the GaAs Gunn diode semiconductor active region. Experimental observations were also conducted including microwave measurements and antenna far-field estimation. They confirm the main theoretical results and extend the key work conclusions. Results: It was shown that the initial phase of the microwave oscillation out of the Gunn oscillator is independent of internal noises of the semiconductor structure and can be fixed only by the modulating voltage pulse. Conclusion: Gunn-diodes based microwave oscillators were stabilized using the leading edge of the voltage pulse from the modulating power supply. These results open up serious prospects for designing antenna phased arrays based on Gunn oscillators without mutual feedback (electrodynamically independent).
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