在三维集成电路中实现2gb 1024位半速率低密度奇偶校验码解码器

Lili Zhou, C. Wakayama, Robin Panda, N. Jangkrajarng, B. Hu, C. Shi
{"title":"在三维集成电路中实现2gb 1024位半速率低密度奇偶校验码解码器","authors":"Lili Zhou, C. Wakayama, Robin Panda, N. Jangkrajarng, B. Hu, C. Shi","doi":"10.1109/ICCD.2007.4601900","DOIUrl":null,"url":null,"abstract":"A 1024-bit, 1/2-rate fully parallel low-density parity-check (LDPC) code decoder has been designed and implemented using a three-dimensional (3D) 0.18 mum fully depleted silicon-on-insulator (FDSOI) CMOS technology based on wafer bonding. The 3D-IC decoder was implemented with about 8M transistors, placed on three tiers, each with one active layer and three metal layers, using 6.9 mm by 7.0 mm of die area. It was simulated to have a 2 Gbps throughput, and consume only 260 mW. This first large-scale 3D application-specific integrated circuit (ASIC) with fine-grain (5mum) vertical interconnects is made possible by jointly developing a complete automated 3D design flow from a commercial 2-D design flow combined with the needed 3D-design tools. The 3D implementation is estimated to offer more than 10 xpower-delay-area product improvement over its corresponding 2D implementation. The work demonstrated the benefits of fine-grain 3D integration for interconnect-heavy very-large-scale digital ASIC implementation.","PeriodicalId":6306,"journal":{"name":"2007 25th International Conference on Computer Design","volume":"5 1","pages":"194-201"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Implementing a 2-Gbs 1024-bit ½-rate low-density parity-check code decoder in three-dimensional integrated circuits\",\"authors\":\"Lili Zhou, C. Wakayama, Robin Panda, N. Jangkrajarng, B. Hu, C. Shi\",\"doi\":\"10.1109/ICCD.2007.4601900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1024-bit, 1/2-rate fully parallel low-density parity-check (LDPC) code decoder has been designed and implemented using a three-dimensional (3D) 0.18 mum fully depleted silicon-on-insulator (FDSOI) CMOS technology based on wafer bonding. The 3D-IC decoder was implemented with about 8M transistors, placed on three tiers, each with one active layer and three metal layers, using 6.9 mm by 7.0 mm of die area. It was simulated to have a 2 Gbps throughput, and consume only 260 mW. This first large-scale 3D application-specific integrated circuit (ASIC) with fine-grain (5mum) vertical interconnects is made possible by jointly developing a complete automated 3D design flow from a commercial 2-D design flow combined with the needed 3D-design tools. The 3D implementation is estimated to offer more than 10 xpower-delay-area product improvement over its corresponding 2D implementation. The work demonstrated the benefits of fine-grain 3D integration for interconnect-heavy very-large-scale digital ASIC implementation.\",\"PeriodicalId\":6306,\"journal\":{\"name\":\"2007 25th International Conference on Computer Design\",\"volume\":\"5 1\",\"pages\":\"194-201\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 25th International Conference on Computer Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.2007.4601900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 25th International Conference on Computer Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2007.4601900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

采用基于晶圆键合的三维(3D) 0.18毫微米全耗尽绝缘体上硅(FDSOI) CMOS技术,设计并实现了一种1024位、1/2速率全并行低密度奇偶校验(LDPC)码解码器。3D-IC解码器由大约8M个晶体管实现,放置在三层上,每层有一个有源层和三个金属层,使用6.9 mm × 7.0 mm的芯片面积。它被模拟为具有2 Gbps的吞吐量,并且仅消耗260 mW。这是第一个具有细粒度(5mum)垂直互连的大规模3D专用集成电路(ASIC),通过联合开发一个完整的自动化3D设计流程,将商业2d设计流程与所需的3D设计工具相结合,使其成为可能。据估计,与相应的2D实现相比,3D实现可提供10倍以上的延迟面积产品改进。这项工作证明了细粒度3D集成对于互连繁重的超大规模数字ASIC实现的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Implementing a 2-Gbs 1024-bit ½-rate low-density parity-check code decoder in three-dimensional integrated circuits
A 1024-bit, 1/2-rate fully parallel low-density parity-check (LDPC) code decoder has been designed and implemented using a three-dimensional (3D) 0.18 mum fully depleted silicon-on-insulator (FDSOI) CMOS technology based on wafer bonding. The 3D-IC decoder was implemented with about 8M transistors, placed on three tiers, each with one active layer and three metal layers, using 6.9 mm by 7.0 mm of die area. It was simulated to have a 2 Gbps throughput, and consume only 260 mW. This first large-scale 3D application-specific integrated circuit (ASIC) with fine-grain (5mum) vertical interconnects is made possible by jointly developing a complete automated 3D design flow from a commercial 2-D design flow combined with the needed 3D-design tools. The 3D implementation is estimated to offer more than 10 xpower-delay-area product improvement over its corresponding 2D implementation. The work demonstrated the benefits of fine-grain 3D integration for interconnect-heavy very-large-scale digital ASIC implementation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Compiler-assisted architectural support for program code integrity monitoring in application-specific instruction set processors Improving the reliability of on-chip data caches under process variations Analytical thermal placement for VLSI lifetime improvement and minimum performance variation Why we need statistical static timing analysis Voltage drop reduction for on-chip power delivery considering leakage current variations
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1