用于w波段传感应用的宽带信号检测器和片上槽天线的设计和测试结果

R. Malmqvist, C. Samuelsson, D. Dancila, S. Reyaz, M. Kaynak, A. Rydberg
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引用次数: 2

摘要

本文介绍了用0.25 μm SiGe BiCMOS工艺制作的宽带功率探测器和片上槽天线的电路设计和结果。W波段SiGe探测器的工作带宽接近20 GHz (75-92 GHz时s11≤-10 dB), 83-94 GHz时的响应率为3-5kV/W (NEP = 10-16 pW/Hz1/2)。SiGe片上槽天线设计覆盖了宽带宽(70-110 GHz),在94 GHz时模拟增益为2 dBi。实现的宽带SiGe BiCMOS功率检测器和片上天线针对高达110GHz的宽带传感应用的高集成单芯片射频前端。
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Design and test results of a wideband sige detector and on-chip slot antenna for W-band sensing applications
This paper presents the circuit designs and results of a wideband power detector and an on-chip slot antenna fabricated in a 0.25 μm SiGe BiCMOS process. The W-band SiGe detector has close to 20 GHz of operational bandwidth (s11≤-10 dB at 75-92 GHz) and a responsivity of 3-5kV/W (NEP = 10-16 pW/Hz1/2) at 83-94 GHz. The SiGe on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 2 dBi of simulated gain at 94 GHz. The realised wideband SiGe BiCMOS power detector and on-chip antenna are targeting highly integrated single-chip RF front-ends for broadband sensing applications up to 110GHz.
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