R. Pascu, F. Craciunoiu, M. Kusko, F. Draghici, A. Dinescu, M. Danila
{"title":"Ni/n型4H-SiC肖特基触点金属化后退火的影响","authors":"R. Pascu, F. Craciunoiu, M. Kusko, F. Draghici, A. Dinescu, M. Danila","doi":"10.1109/SMICND.2012.6400732","DOIUrl":null,"url":null,"abstract":"The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"86 1","pages":"457-460"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact\",\"authors\":\"R. Pascu, F. Craciunoiu, M. Kusko, F. Draghici, A. Dinescu, M. Danila\",\"doi\":\"10.1109/SMICND.2012.6400732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"86 1\",\"pages\":\"457-460\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400732\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact
The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
