具有8GHz中频带宽和20dB红外比的w波段65nm CMOS发射器前端

2010 IEEE International Solid-State Circuits Conference - (ISSCC) Pub Date : 2010-03-18 DOI:10.1109/ISSCC.2010.5433851

Dan Sandström, M. Varonen, M. Kärkkäinen, K. Halonen

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引用次数: 21

摘要

在65nm CMOS中实现了w波段的前端发射机。在77 GHz ~ 94 GHz范围内输出功率大于+4 dBm，抑制比为15 dB ~ 25 dB。最高1db输出压缩点为+2.2 dBm, 85ghz时最大功率为+6.6 dBm。发射机从1.2 V电源提取100 mA。

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A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio

A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA from a 1.2 V supply.

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2010 IEEE International Solid-State Circuits Conference - (ISSCC)

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