先进的短沟道MOS晶体管紧凑模型

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044) Pub Date : 2000-05-21 DOI:10.1109/CICC.2000.852650

O. C. Gouveia-Filho, A. I. A. Cunha, M. C. Schneider, C. Galup-Montoro

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引用次数: 13

摘要

本文介绍了先进的紧凑MOSFET (ACM)模型，这是基于MOS晶体管的物理模型，源自Cunha等人(1998)提出的长沟道晶体管模型。ACM模型由非常简单的表达式组成，适用于任何反转电平，守恒电荷并保持晶体管的源漏对称。短通道效应包括使用紧凑和物理的方法。ACM模型在基准测试中的性能证明了它适合电路仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced compact model for short-channel MOS transistors

This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.

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Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)

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