S. Gruenler, G. Rattmann, T. Erlbacher, A. Bauer, L. Frey
{"title":"基于硅通孔技术的高压单片三维电容器","authors":"S. Gruenler, G. Rattmann, T. Erlbacher, A. Bauer, L. Frey","doi":"10.1109/IITC-MAM.2015.7325655","DOIUrl":null,"url":null,"abstract":"High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors' architecture on their electrical properties is studied for various patterns and geometries.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"11 1","pages":"253-256"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-voltage monolithic 3D capacitors based on through-silicon-via technology\",\"authors\":\"S. Gruenler, G. Rattmann, T. Erlbacher, A. Bauer, L. Frey\",\"doi\":\"10.1109/IITC-MAM.2015.7325655\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors' architecture on their electrical properties is studied for various patterns and geometries.\",\"PeriodicalId\":6514,\"journal\":{\"name\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"volume\":\"11 1\",\"pages\":\"253-256\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC-MAM.2015.7325655\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-voltage monolithic 3D capacitors based on through-silicon-via technology
High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors' architecture on their electrical properties is studied for various patterns and geometries.
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