Huang Hsiao-Tzu , Cao Wei , Lin Hao-Hsiung , Chin Yu-Chung
{"title":"用于长波光子器件的GaAs1-xSbx/GaAs单量子阱","authors":"Huang Hsiao-Tzu , Cao Wei , Lin Hao-Hsiung , Chin Yu-Chung","doi":"10.1016/j.ssel.2019.11.002","DOIUrl":null,"url":null,"abstract":"<div><p>Carrier dynamics in GaAs<sub>1-x</sub>Sb<sub>x</sub>/GaAs single quantum well (SQW) is investigated in this report. With Sb incorporation (<em>x</em> = 0.352, 0.405), the photoluminescence (PL) emission peaks exhibit characteristics of GaAs<sub>1-</sub><em><sub>x</sub></em>Sb<em><sub>x</sub></em> in low temperature and GaAs above 200 K. In power dependent PL, the intensities reveal sublinear power relationship as localized and free excitons are involved at 10 K. The power exponent is in agreement with the degree of localization energy present in SQW and carrier kinetics for various recombination mechanisms are also discussed by deriving respective rate equations.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"1 2","pages":"Pages 98-104"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2019.11.002","citationCount":"6","resultStr":"{\"title\":\"GaAs1-xSbx/GaAs single quantum well for long wavelength photonic devices\",\"authors\":\"Huang Hsiao-Tzu , Cao Wei , Lin Hao-Hsiung , Chin Yu-Chung\",\"doi\":\"10.1016/j.ssel.2019.11.002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Carrier dynamics in GaAs<sub>1-x</sub>Sb<sub>x</sub>/GaAs single quantum well (SQW) is investigated in this report. With Sb incorporation (<em>x</em> = 0.352, 0.405), the photoluminescence (PL) emission peaks exhibit characteristics of GaAs<sub>1-</sub><em><sub>x</sub></em>Sb<em><sub>x</sub></em> in low temperature and GaAs above 200 K. In power dependent PL, the intensities reveal sublinear power relationship as localized and free excitons are involved at 10 K. The power exponent is in agreement with the degree of localization energy present in SQW and carrier kinetics for various recombination mechanisms are also discussed by deriving respective rate equations.</p></div>\",\"PeriodicalId\":101175,\"journal\":{\"name\":\"Solid State Electronics Letters\",\"volume\":\"1 2\",\"pages\":\"Pages 98-104\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.ssel.2019.11.002\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589208819300237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208819300237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs1-xSbx/GaAs single quantum well for long wavelength photonic devices
Carrier dynamics in GaAs1-xSbx/GaAs single quantum well (SQW) is investigated in this report. With Sb incorporation (x = 0.352, 0.405), the photoluminescence (PL) emission peaks exhibit characteristics of GaAs1-xSbx in low temperature and GaAs above 200 K. In power dependent PL, the intensities reveal sublinear power relationship as localized and free excitons are involved at 10 K. The power exponent is in agreement with the degree of localization energy present in SQW and carrier kinetics for various recombination mechanisms are also discussed by deriving respective rate equations.
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