E. Jafarova, Z. Sadygov, A. Dovlatov, L. A. Aliyeva, E. S. Tapdygov, K. A. Askerova
{"title":"等效电感硅微像素雪崩光电二极管","authors":"E. Jafarova, Z. Sadygov, A. Dovlatov, L. A. Aliyeva, E. S. Tapdygov, K. A. Askerova","doi":"10.9790/3021-0705016670","DOIUrl":null,"url":null,"abstract":"There have been investigated reactive properties of silicon avalanche photodiodes (MAPDMicropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f=(50-500)kHz. By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase appearing between current and voltage and it is shown that at Ufor=0 V the = 80 o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.","PeriodicalId":91890,"journal":{"name":"IOSR journal of computer engineering","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Equivalent Inductance Silicon Micro-Pixel Avalance Photodiodes\",\"authors\":\"E. Jafarova, Z. Sadygov, A. Dovlatov, L. A. Aliyeva, E. S. Tapdygov, K. A. Askerova\",\"doi\":\"10.9790/3021-0705016670\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There have been investigated reactive properties of silicon avalanche photodiodes (MAPDMicropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f=(50-500)kHz. By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase appearing between current and voltage and it is shown that at Ufor=0 V the = 80 o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.\",\"PeriodicalId\":91890,\"journal\":{\"name\":\"IOSR journal of computer engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IOSR journal of computer engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.9790/3021-0705016670\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IOSR journal of computer engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.9790/3021-0705016670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Equivalent Inductance Silicon Micro-Pixel Avalance Photodiodes
There have been investigated reactive properties of silicon avalanche photodiodes (MAPDMicropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f=(50-500)kHz. By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase appearing between current and voltage and it is shown that at Ufor=0 V the = 80 o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.