利用全三维倒易空间映射技术研究了衬底对含In0.53Ga0.47As的超薄Ni薄膜固相反应的影响

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325627

S. Zhiou, P. Rodriguez, P. Gergaud, F. Nemouchi, T. Thanh

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引用次数: 5

摘要

我们研究了Ni薄膜与生长在InP或Si衬底上的InGaAs层的固相反应。所获得的金属间化合物具有六边形结构，但在衬底或退火温度方面产生了取向差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In0.53Ga0.47As under-layer by means of full 3D reciprocal space mapping

We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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