热电性能变化的集成热电微冷却器的冷却热流密度、COP和成本优化

Y. Koh, K. Yazawa, A. Shakouri
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引用次数: 4

摘要

热电(TE)微冷却器是一种固态器件,被广泛认为是微电子电路中精确温度控制和点冷却的有力候选者,特别是对温度敏感的器件,如激光二极管。尽管用于微电子的TE微冷却器具有出色的可扩展性和工艺兼容性,但由于相对较小的材料性能(ZT),与蒸汽压缩循环相比,它们的性能相对适中,因此其利用受到限制。除了热电材料在热点冷却方面的关键优势外,提高热电材料的ZT值一直是过去几十年研究的焦点。然而,ZT值的三个组成部分的独立影响还不是很清楚。在本文中,我们报告了TE微冷却器集成和性能系数(COP)变化对材料成本的影响,这些变化与电导率、塞贝克系数和导热系数的变化有关。本研究主要集中在高热流密度点冷却的基础上,分析了一个集成了微通道散热器的实际TE微冷却器。基于一维分析模型,包括系统热阻,我们最大化冷却COP作为驱动电流和TE元件设计厚度的函数。以500 μm × 500 μm尺寸的集成电路为例,在温度限制为65°C,散热器工作温度为74°C的条件下,给出了散热性能。增加ZT值线性地增加给定温度约束下的最大COP,并且最大COP随预期的任何热电性质的变化而相等地变化。然而,对于相同的ZT值,较低的热导率需要更薄的TE元件来优化COP设计,例如,将热导率从1.5 W/mK更改为0.75 W/mK,可将100 W/cm2热流密度的最佳厚度从约9 μm降低到5 μm。这个结果是令人鼓舞的,因为TE的成本直接关系到材料的大量使用。
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Cooling heat flux, COP, and cost optimization of integrated thermoelectric microcoolers with variation of thermoelectric properties
Thermoelectric (TE) microcoolers are solid state devices widely considered as strong candidates for precise temperature control and spot cooling in microelectronic circuits, especially for temperature sensitive devices such as laser diodes. Despite the excellent scalability and process compatibility of TE microcoolers for microelectronics, their utilization has been limited by their relatively moderate performance compared to vapor compression cycles due to the relatively small material figure-of-merit (ZT). In addition to crucial advantage of TE for a hotspot cooling, improving the ZT value of thermoelectric material has been the focus of research interest over the past few decades. Yet the independent impacts of three components of the ZT value have not been very clear. In this paper, we report the material cost impact of TE microcooler integration and coefficient-ofperformance (COP) change relative to modifications of the electrical conductivity, the Seebeck coefficient, and the thermal conductivity. This study is mostly focused on high heat-flux spot cooling based on the analysis of a practical TE microcooler integrated with a microchannel heat sink. Based on a one-dimensional analytic model, including the system thermal resistances, we maximize the cooling COP as functions of the drive current and the design thickness of a TE element. An example demonstrates the cooling performance for a 500 μm x 500 μm size integrated circuit with a temperature constraint of 65 °C maximum and an operating temperature of 74 °C for the heat sink. Increasing the ZT value linearly increases the maximum COP for a given temperature constraint and the maximum COP changes equally by varying any of the thermoelectric properties as expected. For the same ZT value, however, a lower thermal conductivity requires a thinner TE element for a design optimized for COP, e.g. changing the thermal conductivity from 1.5 W/mK to 0.75 W/mK reduces the optimum thickness from approximately 9 μm to 5 μm for 100 W/cm2 of heat flux. This result is encouraging for the utilization of TE for spot cooling since the TE cost directly relates to the mass usage of the material.
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