斜蒸发Cd薄膜氧化法制备CdO薄膜及其表征

Wafaa K. Khalef
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引用次数: 1

摘要

本文采用斜角度沉积技术(OAD)在不同角度(10°和010°)的玻璃基板上生长镉薄膜,然后在(011°C)的空气中以传统炉为氧化源氧化0小时。研究了沉积角度对氧化镉薄膜结构、形貌、光学和电学性能的影响。用XRD技术研究了这些薄膜的晶体结构,证实了这些薄膜的多晶性质,并且在(01)的优先取向(000)下沉积的薄膜具有较高的强度。计算了晶粒度等结构参数。随着入射角的增大,表面形貌有所改善。光学性质表明,透射率随沉积角度的增大而减小,正斜沉积的光能隙(Eg)分别为(4.2)eV和(4.9)eV。在固定的施加电压下(欧姆行为),暗电流随施加电压的增加而线性增加,随沉积角度的增加而减小,正常和倾斜沉积的活化能分别为(1.0022 1.0040)(eV)。
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Preparation and Characterization of CdO Thin Films Obtained by Oxidation of Obliquely Evaporated Cd Thin Films
In this work, oblique angle deposition technique (OAD) was used to grow cadmium thin films onto glass substrates at different angles (1o and 01o), and then oxidized in air at (011 °C) for 0 hour by conventional furnace as the oxidation source. The effect of deposition angle on the structural, morphology, optical and electrical properties of cadmium oxide thin film were studied. XRD technique used to study the crystalline structure of these films confirm the polycrystalline nature of these films and the higher intensity accompanied that deposited with (01 ) with preferred orientation (000). Some structural parameters such as grain size was calculated. The surface morphology shows an improvement with higher incident angle. The optical properties shows that the transmition decreasing with increases deposition angle and the optical energy gap (Eg) values are (4.2 and 4.9) eV for normal and oblique deposition respectively. The dark current increases linearity with applied voltage and deceases with increasing deposition angle at the fixed applied voltage (ohmic behavior) with activation energy found to be (1.0022 1.0040) ( eV) for normal and oblique deposition respectively .
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