CdTe/CdS薄膜太阳能电池后沉积工艺分析

Solar Cells Pub Date : 1991-12-01 DOI:10.1016/0379-6787(91)90095-7

Brian E. McCandless, Robert W. Birkmire

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引用次数: 100

摘要

开发了一种优化物理气相沉积CdTe/CdS薄膜太阳能电池效率的沉积后工艺，并分析了各个工艺步骤对材料和器件性能的影响。用CdCl2进行400°C热处理，使CdTe发生结构重构，晶粒尺寸增大，晶体取向改变。结构和光学测量表明，在热处理过程中，硫和碲的相互扩散导致CdSxTe1−x层的形成，其带隙比CdTe更窄。在优化过程的各个阶段对CdTe器件的双面电流电压和量子效率进行了分析，显示了器件从p-i-n结构向异质结结构的演变。化学处理改善了开路电压(Voc)和Cu/Au与CdTe的接触。该优化过程可应用于采用不同方法沉积CdTe和CdS的电池。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of post deposition processing for CdTe/CdS thin film solar cells

A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400 °C heat treatment with CdCl₂ restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdS_xTe_1−x layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage ( $V_{oc}$ ) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods.

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