650 nm谐振腔led的漏电流和自热

K. Hild, T. Sale, M. Hirotani, Y. Mizuno, T. Kato
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引用次数: 0

摘要

本文研究了漏电流和自热对温度灵敏度的贡献。计算了连续波和脉冲工作时随温度升高光输出恒定时的自热和漏电流,并利用漂移扩散模型计算了650 nm发射GaInP谐振腔发光二极管(RCLEDs)的辐射电流密度。该模型模拟了结构内部载流子的分布及其复合机制。并对GaInP量子阱中的辐射电流进行了提取和绘制。
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Leakage current and self-heating in 650 nm resonant-cavity LEDs
This paper investigates the contributions of leakage current and self-heating to the temperature sensitivity. The amount of self-heating and leakage current is estimated and plotted for a constant light output with increasing temperature for both CW and pulsed operation, and the radiative current density for 650 nm emitting GaInP based resonant cavity light emitting diodes (RCLEDs) is calculated using a drift diffusion model (DDM).The model simulates the distribution of charge carriers within the structure and their recombination mechanisms. The radiative current in GaInP quantum wells is also extracted and plotted.
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