Co掺杂Sm2O3纳米结构的合成、结构和光学性能

Santosh S Nandi, V. Adimule, B. Yallur
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引用次数: 8

摘要

本研究以氢氧化钠为沉淀剂,采用热分解和表面还原法制备了不同浓度(1%、3%和8%)的Co掺杂Sm2O3纳米结构。通过XRD (x射线衍射)、SEM(扫描电子显微镜)和UV-Visible测定片状半导体晶体的特征、形貌、光学吸收率、化学成分。扫描电镜观察到NS的片状形态,晶粒尺寸在80 ~ 96 nm之间。XRD谱图显示了晶粒尺寸在36.8 ~ 29.9 nm之间的立方体混合晶结构。在光谱中观察到光吸收率的红移,光谱从紫外区到可见光区随光学带隙(Eg)值的变化从4.33 eV减小到2.01 eV。紫外辐射激发(激发= 300 nm)后,NS在所有Co掺杂浓度下都有红色发射,当Co掺杂浓度为8%时,最大发射强度出现在485.5 nm处。NS在光电子学和光电子应用领域具有突出的实用性。
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Synthesis, Structural and Optical Properties of Co Doped Sm2O3 Nanostructures
In the present investigation Co doped Sm2O3 nanostructures (NS) with different concentrations (1%, 3% and 8%) synthesized by thermal decomposition and surface reduction methods using sodium hydroxide as precipitating agent. Flake-like shaped semiconductor crystal features, morphology, optical absorptivity, chemical composition determined by XRD (X-ray diffraction), SEM (scanning electron microscopy) and UV-Visible. Flake-like morphology of the NS observed in SEM analysis having grain size varies in between 80 and 96 nm. XRD pattern depicted mixed phase of cubic crystal structure with crystallite size lying between 36.8 and 29.9 nm. Red shift in the optical absorptivity was observed in the spectrum, and spectral shift from ultraviolet to visible region with optical band gap (Eg) value decreases from 4.33 to 2.01 eV. Upon excitation with ultraviolet radiation (excitation = 300 nm), NS showed red emission in all concentrations of Co dopant and maximal emission intensity appeared at 485.5 nm for 8% of Co dopant concentration. The NS finds prominent utility in the field of optoelectronics and photoelectronic applications.
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