采用宽带CMOS跨阻网络的低功耗宽带电压和电流模式二阶滤波器

R. Raut, N. Guo
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引用次数: 0

摘要

采用极宽带CMOS晶体管构建宽带跨阻放大器,利用1 pF /spl plusmn/1.25 V电源实现-3 dB带宽至75.6 MHz的二阶低通滤波器和中心频率为159 MHz的带通滤波器。每极的功耗分别为0.67 mW和0.45 mW。利用MOS晶体管的米勒效应电容,低通滤波器可以从124 MHz调谐到233 MHz,功耗略有增加(每极0.78 mW)。另一种架构采用1pF电容,产生171.3 MHz的低通带宽,每极功耗仅为0.67 mW。在/spl plusmn/2.5 V电源下,-3 dB频率和中心频率可分别扩展到286 MHz和398 MHz,功耗分别为12.25 mW/极和8.17 mW/极。研究了电压模式和电流模式的结构。
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Low power wideband voltage and current mode second-order filters using wideband CMOS transimpedance network
A very wideband CMOS transconductor is used to build a wideband transimpedance amplifier, which realizes second order low pass filters having -3 dB bandwidth to 75.6 MHz and band-pass filter with center frequency of 159 MHz using 1 pF with /spl plusmn/1.25 V power supplies. The power dissipations are respectively 0.67 mW and 0.45 mW per pole. Using Miller effect capacitance of MOS transistors, the low pass filter can be tuned from 124 MHz to 233 MHz with slightly increased power dissipation (0.78 mW per pole). An alternate architecture produces a low-pass bandwidth to 171.3 MHz with 1pF capacitors and a power dissipation of only 0.67 mW per pole. With /spl plusmn/2.5 V supply, the -3 dB frequency and the center frequency can be extended to 286 MHz and 398 MHz respectively with power dissipations of 12.25 mW/pole and 8.17 mW/pole respectively. Both voltage- and current-mode structures are studied.
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