STM中太赫兹诱导的偏置电压调制特性

2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2020-11-08 DOI:10.1109/IRMMW-THz46771.2020.9370648

Yang Luo, Jesus A. M. Calzada, Gong Chen, P. Nguyen, V. Jelic, Yu-Jui Ray Liu, D. Mildenberger, Howe R. J. Simpson, F. Hegmann

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引用次数: 0

摘要

为了理解和表征单周太赫兹(THz)脉冲耦合到扫描隧道显微镜(STM)所产生的瞬态偏置电压，将巴丁隧道模型应用于STM结的三维几何结构。模拟的结处太赫兹诱导隧道电流与在Cu(111)表面上的太赫兹stm观察到的结果吻合良好，为量化尖端-样品界面处太赫兹诱导偏置电压提供了基准。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of THz-induced bias voltage modulation in an STM

To understand and characterize the transient bias voltage induced by single-cycle terahertz (THz) pulses coupled to a scanning tunneling microscope (STM), the Bardeen tunneling model is applied to a 3-dimensional geometry of the STM junction. The simulated THz-induced tunneling current at the junction agrees well with that observed by THz-STM on a Cu(111) surface, providing a benchmark to quantify the THz-induced bias voltage at the tip-sample interface.

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2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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