低驱动电压硅DP-IQ调制器100G及以上

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Pub Date : 2017-07-31 DOI:10.1109/CLEOPR.2017.8119066

K. Goi, N. Ishikura, M. Illarionov, Haike Zhu, K. Ogawa, Y. Yoshida, K. Kitayama, T. Liow, X. Tu, G. Lo, D. Kwong

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引用次数: 2

摘要

我们演示了双极化(DP)正交相移键控和DP 16和32正交调幅格式的高速调制，射频驱动电压低至2 Vppd，使用封装的单片硅DP同相正交调制器，该调制器采用高效的垂直pn结肋波导移相器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-driving-voltage silicon DP-IQ modulator for 100G and beyond

We demonstrate high-speed modulations in dual-polarization (DP) quadrature phase shift keying and DP 16- and 32-quadrature amplitude modulation formats with radio frequency driving voltage as low as 2 Vppd using a packaged monolithic silicon DP in-phase quadrature modulator that employs a highly efficient vertical p-n junction rib-waveguide phase shifter.

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2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

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