S. Maximenko, S. Messenger, C. Cress, M. González, J. A. Freitas, R. Walters
{"title":"CL/EBIC-SEM技术在三结太阳能电池辐照缺陷表征中的应用","authors":"S. Maximenko, S. Messenger, C. Cress, M. González, J. A. Freitas, R. Walters","doi":"10.1109/PVSC.2010.5615869","DOIUrl":null,"url":null,"abstract":"We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) currentquantum efficiency (QE) characteristics.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"001753-001758"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells\",\"authors\":\"S. Maximenko, S. Messenger, C. Cress, M. González, J. A. Freitas, R. Walters\",\"doi\":\"10.1109/PVSC.2010.5615869\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) currentquantum efficiency (QE) characteristics.\",\"PeriodicalId\":6424,\"journal\":{\"name\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"volume\":\"10 1\",\"pages\":\"001753-001758\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2010.5615869\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 35th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2010.5615869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells
We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) currentquantum efficiency (QE) characteristics.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
