基于量子受限Stark效应(QCSE)的AlGAN/GaN UV-Led参数化研究

S. Patra, S. Tiwari, Umang Singh
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引用次数: 0

摘要

氮化材料已经从根本上改变了照明行业,允许高效率和高亮度紫外LED的发展。本文通过模拟研究了电场存在下电致发光光谱选择波长与量子阱厚度之间的关系。根据QCSE,当电场垂直于量子阱层施加时,吸收会产生较大的读位移。我用Pro开发的一维漂移扩散电荷控制求解器(1D-DDCC)软件进行模拟,求解激情薛定谔方程。澳门大学的吴玉仁。该求解器具有所有基本材料的可隧穿参数、异质结模拟、掺杂活化能、薛定谔方程的本征解等功能。
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Parametric study of AlGAN/GaN UV-Led Based on Quantum Confined Stark Effect (QCSE)
III- Nitride materials have radically changed the lighting industry allowing for the developments of high efficiency and brightness ultraviolet LED. In this paper, the characterised between electroluminescence spectra pick wavelength and QW thickness through simulations with presence on electric field. According the QCSE when electric field applied perpendicular to the QWs layers resulted in large read shifts in absorption. I have taken One Dimensional Drift Diffusion charge control solver (1D-DDCC) software for simulations that is solve Passion Schrodinger equation developed by Pro.Yuh-Renn WU of UM. This solver has many functions like- Tunnable parameters for all basic material, Hetrojunction simulation, Dopant activation energy, Eigen solve for Schrodinger equation.
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