一种具有成本效益的Cu化学TSV金属化方案的演示

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325618

K. Vandersmissen, F. Inoue, D. Velenis, Y. Li, D. Dictus, B. Frees, S. Van Huylenbroeck, M. Kondo, T. Seino, N. Heylen, H. Struyf, M. H. van der Veen

{"title":"一种具有成本效益的Cu化学TSV金属化方案的演示","authors":"K. Vandersmissen, F. Inoue, D. Velenis, Y. Li, D. Dictus, B. Frees, S. Van Huylenbroeck, M. Kondo, T. Seino, N. Heylen, H. Struyf, M. H. van der Veen","doi":"10.1109/IITC-MAM.2015.7325618","DOIUrl":null,"url":null,"abstract":"In this work, we present a cost effective Cu electroless (ELD-Cu) metallization scheme in which through-silicon vias (TSVs), can be scaled towards higher aspect ratios. We successfully integrated 30 nm ELD-Cu on 15 nm Ru in 3×50 μm TSVs on 300 mm wafer scale and found excellent electrical reliability. Cost calculations revealed the major impact of the implementation of the platable Ru liner material on the costs for the deposition and chemical mechanical polishing part of the TSV metallization. In addition, we demonstrated a complete TSV filling for the 3.5 nm ALD-Ru case and investigated different kinds of Cu electrodeposition chemistries and their influence on the presence of micro-voids in the TSVs.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"33 1","pages":"197-200"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Demonstration of a cost effective Cu electroless TSV metallization scheme\",\"authors\":\"K. Vandersmissen, F. Inoue, D. Velenis, Y. Li, D. Dictus, B. Frees, S. Van Huylenbroeck, M. Kondo, T. Seino, N. Heylen, H. Struyf, M. H. van der Veen\",\"doi\":\"10.1109/IITC-MAM.2015.7325618\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present a cost effective Cu electroless (ELD-Cu) metallization scheme in which through-silicon vias (TSVs), can be scaled towards higher aspect ratios. We successfully integrated 30 nm ELD-Cu on 15 nm Ru in 3×50 μm TSVs on 300 mm wafer scale and found excellent electrical reliability. Cost calculations revealed the major impact of the implementation of the platable Ru liner material on the costs for the deposition and chemical mechanical polishing part of the TSV metallization. In addition, we demonstrated a complete TSV filling for the 3.5 nm ALD-Ru case and investigated different kinds of Cu electrodeposition chemistries and their influence on the presence of micro-voids in the TSVs.\",\"PeriodicalId\":6514,\"journal\":{\"name\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"volume\":\"33 1\",\"pages\":\"197-200\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC-MAM.2015.7325618\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325618","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在这项工作中，我们提出了一种具有成本效益的Cu化学(ELD-Cu)金属化方案，其中通过硅通孔(tsv)可以缩放到更高的纵横比。我们成功地将30 nm的ELD-Cu集成在15 nm的Ru上，在3×50 μm的tsv上，在300 mm晶圆尺度上获得了出色的电气可靠性。成本计算揭示了镀Ru衬垫材料的实施对TSV金属化的沉积和化学机械抛光部分的成本的主要影响。此外，我们展示了3.5 nm ALD-Ru的完整TSV填充，并研究了不同类型的Cu电沉积化学及其对TSV中微孔存在的影响。

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Demonstration of a cost effective Cu electroless TSV metallization scheme

In this work, we present a cost effective Cu electroless (ELD-Cu) metallization scheme in which through-silicon vias (TSVs), can be scaled towards higher aspect ratios. We successfully integrated 30 nm ELD-Cu on 15 nm Ru in 3×50 μm TSVs on 300 mm wafer scale and found excellent electrical reliability. Cost calculations revealed the major impact of the implementation of the platable Ru liner material on the costs for the deposition and chemical mechanical polishing part of the TSV metallization. In addition, we demonstrated a complete TSV filling for the 3.5 nm ALD-Ru case and investigated different kinds of Cu electrodeposition chemistries and their influence on the presence of micro-voids in the TSVs.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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