了解确定用于器件集成的量子点薄膜能级的方法

Tom Nakotte, Simran Singh, Anna M. Hiszpanksi
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引用次数: 0

摘要

了解量子点薄膜中的能级是确定电极和其他有源层(即空穴阻挡层)所用材料以及量子点器件中操作条件的关键变量。开尔文探针力显微镜(KPFM)是一种常用的测定材料间接触电位差的技术,用于测定硫族铅和硫族银量子点薄膜的费米能级位置。在薄膜形成过程中,盖层配体的选择对费米能级、价态和导带的位置有显著影响。在Ag2Se量子点薄膜中,费米能级随盖盖配体的变化为0.3 eV,而在PbSe量子点薄膜中,费米能级随盖盖配体的变化为0.45 eV,其中碘化物基配体的费米能级位置最高,而油胺的费米能级位置最低。概述了KPFM的测量过程,并讨论了该技术的当前强度和局限性。
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Understanding methods to determine energy levels of quantum dot films for device integration
Knowing the energy levels in quantum dot films is a crucial variable for determining materials to be used for electrodes and other active layers (i.e., hole blocking layer, as well as operation conditions in quantum dot devices. Kelvin Probe Force Microscopy (KPFM), a technique commonly used to determine the contact potential difference between materials, is used to determine the Fermi level position of lead chalcogenide and silver chalcogenide quantum dot films. Choice of capping ligand during film formation is shown to have significant effect on the position of the Fermi level, valence, and conduction bands. In Ag2Se quantum dots films a 0.3 eV variation in Fermi level as a function of capping ligand is observed while 0.45 eV variation is observed in PbSe quantum dot films, with iodide-based ligands showing the highest Fermi level position and oleylamine displaying the lowest. KPFM measurement procedure is outlined, and the current strength and limitations of the technique are discussed.
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