在光滑石英衬底上用一步脉冲激光沉积法生长的热致变色VO2(M)纳米薄膜的结构、光学和电学特性

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Advances in Condensed Matter Physics Pub Date : 2021-09-06 DOI:10.1155/2021/7700676
A. Hendaoui
{"title":"在光滑石英衬底上用一步脉冲激光沉积法生长的热致变色VO2(M)纳米薄膜的结构、光学和电学特性","authors":"A. Hendaoui","doi":"10.1155/2021/7700676","DOIUrl":null,"url":null,"abstract":"Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2021-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Substrate Temperature-Dependent Structural, Optical, and Electrical Properties of Thermochromic VO2(M) Nanostructured Films Grown by a One-Step Pulsed Laser Deposition Process on Smooth Quartz Substrates\",\"authors\":\"A. Hendaoui\",\"doi\":\"10.1155/2021/7700676\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.\",\"PeriodicalId\":7382,\"journal\":{\"name\":\"Advances in Condensed Matter Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2021-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Condensed Matter Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1155/2021/7700676\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Condensed Matter Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1155/2021/7700676","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 4

摘要

采用低沉积速率脉冲激光沉积技术,在光滑石英衬底上直接生长出不同形貌的M相氧化钒(VO2)薄膜。当衬底温度在450°C - 750°C范围内升高时,VO2(M)薄膜的(011)织构化效果较好,结晶度也有所提高。在450°C时,VO2(M)晶粒细小且密集排列,而在750°C时,微/纳米线排列较少。讨论了结晶度/形貌演变的机理,并将其与温度对吸附原子扩散的影响以及对VO2(M)薄膜中V5+价态含量的影响联系起来。电阻率测量作为温度的函数显示,VO2(M)薄膜的绝缘体到金属的转变特征(即转变温度(TIMT),电阻率变化(ΔR),滞后宽度(ΔH)和转变锐利度(ΔT))强烈依赖于加工温度。在光学性能方面,发现在高温下获得的薄膜的开放(即多孔)结构导致其透光率的提高。同时,薄膜的结晶度随温度的升高而提高,从而提高了薄膜的红外调制能力。目前的贡献提供了一个一步的过程来控制生长在光滑石英衬底上的VO2(M)薄膜的形态,用于开关,存储器件和智能窗口。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Substrate Temperature-Dependent Structural, Optical, and Electrical Properties of Thermochromic VO2(M) Nanostructured Films Grown by a One-Step Pulsed Laser Deposition Process on Smooth Quartz Substrates
Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advances in Condensed Matter Physics
Advances in Condensed Matter Physics PHYSICS, CONDENSED MATTER-
CiteScore
2.30
自引率
0.00%
发文量
33
审稿时长
6-12 weeks
期刊介绍: Advances in Condensed Matter Physics publishes articles on the experimental and theoretical study of the physics of materials in solid, liquid, amorphous, and exotic states. Papers consider the quantum, classical, and statistical mechanics of materials; their structure, dynamics, and phase transitions; and their magnetic, electronic, thermal, and optical properties. Submission of original research, and focused review articles, is welcomed from researchers from across the entire condensed matter physics community.
期刊最新文献
The Effect of Pressure Variations on the Electronic Structure, Phonon, and Superconducting Properties of Yttrium Hydrogen Selenide Compound Unlocking the Magnetic and Half-Metallic Properties of AMY2 (A = Cu, Ag; M = Sc, Ti, V, Cr, Mn, Fe; Y = S, Se) Compounds in Chalcopyrite Structure: An Ab Initio Study for Spintronics Applications The Optimal Doping Ratio of Fe2O3 for Enhancing the Electrochemical Stability of Zeolitic Imidazolate Framework-8 for Energy Storage Devices Computational Study of the Effect of the Size-Dependent Dielectric Functions of Gold Nanomaterials on Optical Properties Electron Transport Properties of Eu(Cu1 − xAgx)2Si2 (0 ≤ x ≤ 1): Initiation of Transition Eu2+ ↔ Eu2.41+ in the Intermediate Valence State
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1