R. Tatavarti, K. Ban, A. Wibowo, D. Kuciauskas, H. Guthrey, K. Jones, S. Johnston, A. Norman, D. Levi, M. Al‐Jassim
{"title":"在GaAs衬底上生长的1.0 ev p-In0.27Ga0.73As层的少数载流子寿命","authors":"R. Tatavarti, K. Ban, A. Wibowo, D. Kuciauskas, H. Guthrey, K. Jones, S. Johnston, A. Norman, D. Levi, M. Al‐Jassim","doi":"10.1109/PVSC.2014.6925664","DOIUrl":null,"url":null,"abstract":"Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In<sub>0.27</sub>Ga<sub>0.73</sub>As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In<sub>0.27</sub>Ga<sub>0.73</sub>As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-In<sub>x</sub>Ga<sub>1-x</sub>As with a doping density of 1×10<sup>17</sup> cm<sup>-3</sup> to 5 ns for a doping density of 5×10<sup>17</sup> cm<sup>q̑3</sup>. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×10<sup>5</sup> cm<sup>-2</sup> for a 1.0-μm thick layer of p-In<sub>0.27</sub>Ga<sub>0.73</sub>As (1.0eV) at the center of the wafer and 1.4×10<sup>6</sup> cm<sup>-2</sup> towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"51 1","pages":"3414-3416"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Minority carrier lifetimes in 1.0-eV p-In0.27Ga0.73As layers grown on GaAs substrates\",\"authors\":\"R. Tatavarti, K. Ban, A. Wibowo, D. Kuciauskas, H. Guthrey, K. Jones, S. Johnston, A. Norman, D. Levi, M. Al‐Jassim\",\"doi\":\"10.1109/PVSC.2014.6925664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In<sub>0.27</sub>Ga<sub>0.73</sub>As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In<sub>0.27</sub>Ga<sub>0.73</sub>As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-In<sub>x</sub>Ga<sub>1-x</sub>As with a doping density of 1×10<sup>17</sup> cm<sup>-3</sup> to 5 ns for a doping density of 5×10<sup>17</sup> cm<sup>q̑3</sup>. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×10<sup>5</sup> cm<sup>-2</sup> for a 1.0-μm thick layer of p-In<sub>0.27</sub>Ga<sub>0.73</sub>As (1.0eV) at the center of the wafer and 1.4×10<sup>6</sup> cm<sup>-2</sup> towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.\",\"PeriodicalId\":6649,\"journal\":{\"name\":\"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"51 1\",\"pages\":\"3414-3416\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2014.6925664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2014.6925664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Minority carrier lifetimes in 1.0-eV p-In0.27Ga0.73As layers grown on GaAs substrates
Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In0.27Ga0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In0.27Ga0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-InxGa1-xAs with a doping density of 1×1017 cm-3 to 5 ns for a doping density of 5×1017 cmq̑3. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×105 cm-2 for a 1.0-μm thick layer of p-In0.27Ga0.73As (1.0eV) at the center of the wafer and 1.4×106 cm-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.
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