用太赫兹光谱学评价激光超掺硅中的载流子寿命

2018 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2018-05-13 DOI:10.1364/CLEO_AT.2018.JTU3O.6

S. Dissanayake, P. Chow, S. Lim, M. Wilkins, Eduard Dumitresc, Wenjie Yang, Q. Hudspeth, J. Krich, Jim S. Williams, J. Warrender, Meng-ju Sher

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引用次数: 0

摘要

在过饱和浓度下掺杂金的硅在红外光电探测器和光伏应用中很有前景。离子注入后脉冲激光加工产生高质量的超掺杂材料，我们使用太赫兹光谱研究材料的性质。

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Evaluating carrier lifetimes in laser hyperdoped silicon using terahertz spectroscopy

Silicon doped with gold at supersaturated concentrations is promising for infrared photodetectors and photovoltaic applications. Ion implantation followed by pulsed laser processing creates high quality hyperdoped material and we investigate material properties using terahertz spectroscopy.

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2018 Conference on Lasers and Electro-Optics (CLEO)

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