{"title":"表面键合对氮化铟纳米半导体热物理性能的影响","authors":"B. D. Diwan, S. Murugan","doi":"10.1109/ICANMEET.2013.6609350","DOIUrl":null,"url":null,"abstract":"In this paper we have analyzed the effect of size and number of atom-pairs in normalized per atom pair binding (cohesive) energy and melting temperature of the Indium nitride ( InN ) nano-particle using simple model approach. It is observed that the per-atom-pair binding (cohesive) energy and melting temperature are a quadratic function of the inverse of the particle size for InN nano-particle. The per atom-pair binding (cohesive) energy and melting temperature comes near that of their bulk value with increasing the particle size and same as the bulk material when the particle size is above than 100 nm.","PeriodicalId":13708,"journal":{"name":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","volume":"1 1","pages":"509-512"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Role of surface bonding in thermo physical properties of Indium nitride nano-semiconductor\",\"authors\":\"B. D. Diwan, S. Murugan\",\"doi\":\"10.1109/ICANMEET.2013.6609350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we have analyzed the effect of size and number of atom-pairs in normalized per atom pair binding (cohesive) energy and melting temperature of the Indium nitride ( InN ) nano-particle using simple model approach. It is observed that the per-atom-pair binding (cohesive) energy and melting temperature are a quadratic function of the inverse of the particle size for InN nano-particle. The per atom-pair binding (cohesive) energy and melting temperature comes near that of their bulk value with increasing the particle size and same as the bulk material when the particle size is above than 100 nm.\",\"PeriodicalId\":13708,\"journal\":{\"name\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"volume\":\"1 1\",\"pages\":\"509-512\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICANMEET.2013.6609350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICANMEET.2013.6609350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Role of surface bonding in thermo physical properties of Indium nitride nano-semiconductor
In this paper we have analyzed the effect of size and number of atom-pairs in normalized per atom pair binding (cohesive) energy and melting temperature of the Indium nitride ( InN ) nano-particle using simple model approach. It is observed that the per-atom-pair binding (cohesive) energy and melting temperature are a quadratic function of the inverse of the particle size for InN nano-particle. The per atom-pair binding (cohesive) energy and melting temperature comes near that of their bulk value with increasing the particle size and same as the bulk material when the particle size is above than 100 nm.
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