G. Han, Yue Peng, Huan Liu, Jiuren Zhou, Zhengdong Luo, Bing Chen, R. Cheng, C. Jin, W. Xiao, Fenning Liu, Jiayi Zhao, Shulong Wang, Xiao Yu, Y. Liu, Yue Hao
{"title":"用于智能计算的铁电器件","authors":"G. Han, Yue Peng, Huan Liu, Jiuren Zhou, Zhengdong Luo, Bing Chen, R. Cheng, C. Jin, W. Xiao, Fenning Liu, Jiayi Zhao, Shulong Wang, Xiao Yu, Y. Liu, Yue Hao","doi":"10.34133/2022/9859508","DOIUrl":null,"url":null,"abstract":"Recently, transistor scaling is approaching its physical limit, hindering the further development of the computing capability. In the post-Moore era, emerging logic and storage devices have been the fundamental hardware for expanding the capability of intelligent computing. In this article, the recent progress of ferroelectric devices for intelligent computing is reviewed. The material properties and electrical characteristics of ferroelectric devices are elucidated, followed by a discussion of novel ferroelectric materials and devices that can be used for intelligent computing. Ferroelectric capacitors, transistors, and tunneling junction devices used for low-power logic, high-performance memory, and neuromorphic applications are comprehensively reviewed and compared. In addition, to provide useful guidance for developing high-performance ferroelectric-based intelligent computing systems, the key challenges for realizing ultrascaled ferroelectric devices for high-efficiency computing are discussed.","PeriodicalId":45291,"journal":{"name":"International Journal of Intelligent Computing and Cybernetics","volume":"31 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2022-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Ferroelectric Devices for Intelligent Computing\",\"authors\":\"G. Han, Yue Peng, Huan Liu, Jiuren Zhou, Zhengdong Luo, Bing Chen, R. Cheng, C. Jin, W. Xiao, Fenning Liu, Jiayi Zhao, Shulong Wang, Xiao Yu, Y. Liu, Yue Hao\",\"doi\":\"10.34133/2022/9859508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, transistor scaling is approaching its physical limit, hindering the further development of the computing capability. In the post-Moore era, emerging logic and storage devices have been the fundamental hardware for expanding the capability of intelligent computing. In this article, the recent progress of ferroelectric devices for intelligent computing is reviewed. The material properties and electrical characteristics of ferroelectric devices are elucidated, followed by a discussion of novel ferroelectric materials and devices that can be used for intelligent computing. Ferroelectric capacitors, transistors, and tunneling junction devices used for low-power logic, high-performance memory, and neuromorphic applications are comprehensively reviewed and compared. In addition, to provide useful guidance for developing high-performance ferroelectric-based intelligent computing systems, the key challenges for realizing ultrascaled ferroelectric devices for high-efficiency computing are discussed.\",\"PeriodicalId\":45291,\"journal\":{\"name\":\"International Journal of Intelligent Computing and Cybernetics\",\"volume\":\"31 1\",\"pages\":\"\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2022-09-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Intelligent Computing and Cybernetics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.34133/2022/9859508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, CYBERNETICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Intelligent Computing and Cybernetics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.34133/2022/9859508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, CYBERNETICS","Score":null,"Total":0}
Recently, transistor scaling is approaching its physical limit, hindering the further development of the computing capability. In the post-Moore era, emerging logic and storage devices have been the fundamental hardware for expanding the capability of intelligent computing. In this article, the recent progress of ferroelectric devices for intelligent computing is reviewed. The material properties and electrical characteristics of ferroelectric devices are elucidated, followed by a discussion of novel ferroelectric materials and devices that can be used for intelligent computing. Ferroelectric capacitors, transistors, and tunneling junction devices used for low-power logic, high-performance memory, and neuromorphic applications are comprehensively reviewed and compared. In addition, to provide useful guidance for developing high-performance ferroelectric-based intelligent computing systems, the key challenges for realizing ultrascaled ferroelectric devices for high-efficiency computing are discussed.