Defect Saturation with Carriers in GaN/InGaN LEDs: A potential phenomenon to confront the green gap

Non-radiative defects play a major detrimental role by escalating SRH recombination in InGaN LEDs, especially with high Indium composition. Saturation of the defects with injected carriers is well known for various materials. However, this phenomenon is not studied widely for LEDs. This paper highlights some of the pioneering experimental and theoretical advancements toward understanding the concept that not all defects in LEDs participate in SRH recombination, instead part of them get saturated with carriers.