{"title":"微波辐射局部效应下半导体结构热过程发展的动力学","authors":"E. P. Taran, Y. Gordienko, N. Slipchenko","doi":"10.1109/CRMICO.2014.6959674","DOIUrl":null,"url":null,"abstract":"The present paper concerns the basic principles of the model of local effects of microwave radiation in semiconductor structures. The validity of the proposed model is based on the method of finite-difference time-domain (FDTD) is shown. The influence of radius of a spherical probe on the distribution and values of the field intensity in the axis of semiconductor structures is determined. Dynamics of development of thermal processes in the local region of semiconductor structures in a continuous mode with relation to electrophysical parameters on temperature are obtained.","PeriodicalId":6662,"journal":{"name":"2014 24th International Crimean Conference Microwave & Telecommunication Technology","volume":"27 1","pages":"878-879"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dynamics of development of thermal processes in semiconductor structures at the local effects of microwave radiation\",\"authors\":\"E. P. Taran, Y. Gordienko, N. Slipchenko\",\"doi\":\"10.1109/CRMICO.2014.6959674\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present paper concerns the basic principles of the model of local effects of microwave radiation in semiconductor structures. The validity of the proposed model is based on the method of finite-difference time-domain (FDTD) is shown. The influence of radius of a spherical probe on the distribution and values of the field intensity in the axis of semiconductor structures is determined. Dynamics of development of thermal processes in the local region of semiconductor structures in a continuous mode with relation to electrophysical parameters on temperature are obtained.\",\"PeriodicalId\":6662,\"journal\":{\"name\":\"2014 24th International Crimean Conference Microwave & Telecommunication Technology\",\"volume\":\"27 1\",\"pages\":\"878-879\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 24th International Crimean Conference Microwave & Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2014.6959674\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 24th International Crimean Conference Microwave & Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2014.6959674","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dynamics of development of thermal processes in semiconductor structures at the local effects of microwave radiation
The present paper concerns the basic principles of the model of local effects of microwave radiation in semiconductor structures. The validity of the proposed model is based on the method of finite-difference time-domain (FDTD) is shown. The influence of radius of a spherical probe on the distribution and values of the field intensity in the axis of semiconductor structures is determined. Dynamics of development of thermal processes in the local region of semiconductor structures in a continuous mode with relation to electrophysical parameters on temperature are obtained.
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