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引用次数: 14

摘要

超大规模集成电路行业正在加速走向CMOS的规模化(批量)终结。接近其缩放极限时,CMOS晶体管的通道长度约为25纳米,开关速度约为100纳米通道长度器件的三倍,f/sub /约为250 GHz。然而,由于必须克服许多技术困难,这种CMOS技术的实现还远未确定。在未来几年,CMOS在射频领域的应用将快速增长,而数字CMOS的性能将趋于饱和。在继续向25nm通道长度发展的同时,CMOS的发展也将专注于扩展批量器件以外的机会。
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CMOS in the new millennium
The VLSI industry is accelerating towards the end of scaling (bulk) CMOS. Near its scaling limit, a CMOS transistor could have a channel length of about 25 nm, a switching speed about three times as fast as a device of 100-nm channel length, and an f/sub T/ of about 250 GHz. However realization of this CMOS technology is far from certain due to the many technical difficulties that must be overcome. In the next few years, while the application of CMOS to RF will grow rapidly, performance of digital CMOS will saturate. While development towards 25-nm channel length will continue, CMOS development will also be focused on opportunities beyond scaling the bulk device.
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