前驱体浓度对共沉淀法制备的硫化锌纳米材料的影响

V. Choudapur, Butchi Raju Akondi, A. Bennal
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引用次数: 0

摘要

发光II-VI半导体纳米材料的研究因其在光电和生物光子器件中的潜在应用而受到广泛关注。在II-VI族半导体纳米粒子中,ZnS纳米粒子在室温下具有大的激子结合能和宽的直接带隙,因其有趣的光电特性而受到人们的广泛关注。本文采用简单共沉淀法在不同浓度的前驱体下制备了高带隙硫化锌纳米晶体,并研究了硫浓度对其结构和光学性质的影响。采用低成本的前驱体和去离子水作为溶剂制备了硫化锌纳米材料,不使用任何封盖剂。采用x射线衍射(XRD)、能谱分析、紫外可见分光光度法、光致发光、扫描电镜(SEM)和椭偏仪对合成的硫化锌纳米晶体进行了表征。x射线衍射研究表明,制备的ZnS纳米晶是沿(111)方向优先取向的立方相多晶。晶体尺寸为5 ~ 11nm。EDAX模式证实了锌和硫的存在。光学吸收测量发现,随着ZnS中硫浓度的降低,直接光学带隙能量从4.4 ev增加到5.2eV,并表现出较大的量子约束效应。采用椭偏法测量了ZnS薄膜的光学常数。用两种探针方法测量了涂覆在ITO玻璃上的薄膜的电导率。版权所有©2017 VBRI出版社。
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Effect of precursor concentration on zinc sulphide nanomaterial prepared by co-precipitation method
The studies on luminescent II-VI semiconducting nanomaterials have attracted widespread attention, due to their potential applications in optoelectronic and biophotonic devices. Amongst II-VI group semiconductor nanoparticles, ZnS Nano Particles with large exciton binding energy and wide direct bandgap at room temperature have drawn considerable attention for exploring its interesting optoelectronic properties. In this paper, high band gap Zinc Sulphide nanocrystals are prepared by simple Co-precipitation method at different concentrations of precursors, and the role of sulphur concentration on structural and optical properties is studied. The Zinc Sulphide nanomaterial was prepared using low cost precursors and de ionised water as solvent without using any capping agents. As synthesized Zinc Sulphide nanocrystals were characterized by using X-ray diffraction (XRD), Energy Dispersive Spectroscopy analysis, UV-Visible Spectrophotometry, Photoluminescence, Scanning electron Microscopy (SEM) and Ellipsometry. X-ray diffraction studies revealed that as prepared of ZnS nanocrystals are Polycrystalline with Cubic phase with preferential orientation along (111) direction. The crystallite size of the order of 5-11nm were obtained. EDAX pattern confirms the presence of Zinc and Sulfur. From optical absorption measurements, it has been observed that the direct optical band gap energy increases from 4.4 to 5.2eV with decrease in sulphur concentration in ZnS and exhibit large quantum confinement effect. Ellipsometry was carried out to measure optical constants of ZnS thin film. The electrical conductivity of the film is measured for the film coated on ITO glass by two probe methods. Copyright © 2017 VBRI Press.
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