喷雾热解法沉积f共掺杂PTO薄膜的光电性能

American Journal of Materials Science Pub Date : 2013-08-01 DOI:10.5923/J.MATERIALS.20130304.05

Benjamin Odari, Robinson Musembi, M. Mageto, H. Othieno, F. Gaitho, M. Mghendi, Valentine Muramba

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引用次数: 7

摘要

采用由氯化锡(SnCl4.5H2O)、氯化钯(Pd Cl2)和氟化氨(NH4F)组成的酒精前驱体溶液，在450℃下在玻璃衬底上热解制备了f共掺杂氧化钯(PTO)薄膜。在优化条件下，Pd含量为3.68at%， F含量为0 ~ 23.96at%，共掺F的PTO薄膜的电阻率为0.3-6.9×10 -2 Ωcm。在紫外/可见/近红外光谱下研究了其光学性质。薄膜的光学带隙分布在3.945 ~ 4.014 eV之间。利用Drude项和Kim项的色散分析，测定了玻璃薄膜的光学常数。

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Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

F-co-doped Palladiu m Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 450 0 C using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl4.5H2O), Palladiu m Ch loride (Pd Cl2) and Ammoniu m Fluoride (NH4F). A resistivity of 0.3-6.9×10 -2 Ωcm was obtained in F-co-doped PTO films prepared with a Pd content of 3.68at% and F content of 0 - 23.96at% under optimized conditions. The optical properties were studied in the UV/ VIS/ NIR region. The optical bandgap of the films laid in the range 3.945 - 4.014 eV. Using dispersion analysis with Drude and Kim terms, optical constants were determined fro m spectro-photometric measurements for films on glass.

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American Journal of Materials Science

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