T. Reed, M. Rodwell, Z. Griffith, P. Rowell, M. Field, M. Urteaga
{"title":"采用InP hbt的220 GHz 58.4mW固态功率放大器","authors":"T. Reed, M. Rodwell, Z. Griffith, P. Rowell, M. Field, M. Urteaga","doi":"10.1109/MWSYM.2012.6259659","DOIUrl":null,"url":null,"abstract":"A 220 GHz solid state power amplifier MMIC is presented demonstrating 58.4 mW of output power with 5.4dB compressed gain. The 8-cell amplifier has a small signal gain of 8.9 dB at 220 GHz, and 3-dB bandwidth from 206 to 242GHz. Amplifier cells are formed using a 250nm InP HBT technology and a 5um BCB thin-film, non-inverted microstrip wiring environment. Power division and combining of the eight amplifier cells is done by a 2-1 quarter wave combiner series connected to a 4-1 Dolph-Chebyshev combiner. More than 50mW of output power was observed from 215 to 225GHz.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 58.4mW solid-state power amplifier at 220 GHz using InP HBTs\",\"authors\":\"T. Reed, M. Rodwell, Z. Griffith, P. Rowell, M. Field, M. Urteaga\",\"doi\":\"10.1109/MWSYM.2012.6259659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 220 GHz solid state power amplifier MMIC is presented demonstrating 58.4 mW of output power with 5.4dB compressed gain. The 8-cell amplifier has a small signal gain of 8.9 dB at 220 GHz, and 3-dB bandwidth from 206 to 242GHz. Amplifier cells are formed using a 250nm InP HBT technology and a 5um BCB thin-film, non-inverted microstrip wiring environment. Power division and combining of the eight amplifier cells is done by a 2-1 quarter wave combiner series connected to a 4-1 Dolph-Chebyshev combiner. More than 50mW of output power was observed from 215 to 225GHz.\",\"PeriodicalId\":6385,\"journal\":{\"name\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2012.6259659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE/MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2012.6259659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 58.4mW solid-state power amplifier at 220 GHz using InP HBTs
A 220 GHz solid state power amplifier MMIC is presented demonstrating 58.4 mW of output power with 5.4dB compressed gain. The 8-cell amplifier has a small signal gain of 8.9 dB at 220 GHz, and 3-dB bandwidth from 206 to 242GHz. Amplifier cells are formed using a 250nm InP HBT technology and a 5um BCB thin-film, non-inverted microstrip wiring environment. Power division and combining of the eight amplifier cells is done by a 2-1 quarter wave combiner series connected to a 4-1 Dolph-Chebyshev combiner. More than 50mW of output power was observed from 215 to 225GHz.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
