Impact of silicon-body thickness on emulation of double-gate UTBB SOI MOSFETs with different ground plane structures

In this work, we investigate the impact of varying silicon-body thickness, Tsi i.e 5 nm, 7 nm, 10 nm and 12 nm on the digital figures-of-merit performance of Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode. We show that degradations of the digital characteristics i.e DIBL, subthreshold-slope (SS) and Ioff occur with an increased in Tsi. Meanwhile, no significant improvement in Ion is observed with the reduction in Tsi whereas thicker Tsi produces a slightly higher transconductance, gm. In terms of the impact of different GP structures, significant variations in DIBL and SS is observed with thicker Tsi as different GP structure is employed, and these variations are gradually suppressed when Tsi is decreased. In other words, advantages of different GP structures are not significantly apparent at thinner Tsi.