光刻工具的照明优化实现了28nm节点的匹配

Wuping Wang, Long Qin, Zhengkai Yang, Yulong Li, Zhibiao Mao, Yu Zhang
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引用次数: 1

摘要

大规模集成电路的临界尺寸主要由光刻工艺控制。目前,193nm浸没光刻技术已广泛应用于28nm节点的芯片制造。随着尼康193nm浸没式光刻工具的应用,通过OPE (Optical Proximity Effect)将尼康浸没式光刻与ASML进行匹配具有重要意义。良好的扫描仪匹配将有利于扩展尼康193nm浸没光刻工具,有效提高生产效率。本文在对尼康浸没工具与ASML浸没工具进行OPE研究的基础上,开发了一套两种浸没工具在28 nm节点的匹配方法,实现了28 nm光刻工艺从ASML浸没工具向尼康浸没工具的转移。
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Illumination optimization for lithography tools ope matching at 28 nm nodes
The CD (critical dimension) of large scale integrated circuit was dominated by lithography process. The 193 nm immersion lithography nowadays has been widely used in chip manufacturing at 28 nm nodes. With the application of Nikon 193 nm immersion lithography tools, it is significant to match the Nikon immersion with ASML through OPE (Optical Proximity Effect). Good scanner matching will be beneficial for extending Nikon 193 nm immersion lithography tools and effectively improving production efficiency. In this paper, based on the OPE research between Nikon immersion tool and ASML immersion tool, we have developed a set of matching method for both immersion tools at 28 nm node and realized the 28 nm lithography process transfer from ASML immersion tool to Nikon immersion tool.
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