具有700mV以上钝化接触硅底部电池的串联硅发光太阳能聚光器

San Theingi, O. Ilic, Colton R. Bukowsky, R. Nuzzo, A. Alivisatos, J. Geisz, P. Stradins, H. Atwater, David R. Needell, Haley Bauser, Megan E. Phelan, W. Nemeth, Dawn Findley, Hanxiao Su, Brent A. Koscher, Zach Nett
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引用次数: 1

摘要

发光太阳能聚光器(LSC)串联硅(Si)提供了一条实现30%以上总效率的途径,这可以克服单结硅电池的理论效率极限。在这里,我们展示了用于LSC串联硅的高Voc钝化接触硅底部电池的光学耦合和性能,其中顶部模块由高效发光基团和嵌入聚甲基丙烯酸月桂酯波导中的微型InGaP电池阵列组成。在这种器件配置中,InGaP单元面积覆盖率仅为LSC总面积的约0.5%,这大大减少了高成本III-V材料的使用。在LSC光谱下研究了Si亚电池的性能,并与1 μm厚InGaP滤波器下的测量结果进行了比较,后者模拟了传统III-V/Si串联中Si底电池的光谱。在这些串联应用中,已观察到钝化接触硅底电池的Voc大于700 mV。
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Luminescent Solar Concentrator Tandem-on-Silicon with above 700mV Passivated Contact Silicon Bottom Cell
Luminescent solar concentrator (LSC) tandem-on-silicon (Si) provides a route towards achieving higher than 30% overall efficiency which can overcome the theoretical efficiency limit of a single junction Si cell. Here, we present optical coupling and performance of high Voc passivated contact Si bottom cell for LSC tandem-on-Si where the top module consists of highly efficient luminophores and an array of micro InGaP cells embedded in a poly (lauryl methacrylate) waveguide. In this device configuration, InGaP cell area coverage is only ~0.5% of the total LSC area which significantly reduces the high cost III-V material usage. The performance of Si sub-cell is investigated under LSC spectrum and is compared against the measurement done under 1 μm thick InGaP filter which mimics the spectrum seen by Si bottom cell in a conventional III-V/Si tandem. Voc of greater than 700 mV has been observed for the passivated contact Si bottom cell in these tandem applications.
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