有限尺寸和边缘效应对石墨烯纳米带场效应晶体管量子电容的影响

2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI:10.1109/SMICND.2014.6966391

G. Kliros

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引用次数: 2

摘要

为了探讨几种有限尺寸效应和边缘效应，提出了agnr - fet量子电容的全解析模型。结果表明，亚10nm AGNRs的量子电容与通道电位具有非单调性，其峰值和相应的通道电位强烈依赖于带的宽度和边缘效应。

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Finite-size and edge effects on the quantum capacitance of graphene nanoribbon field-effect transistors

A fully analytical model for the quantum capacitance of AGNR-FETs is proposed in order to explore several finite-size and edge effects. It is demonstrated that, the quantum capacitance of sub-10 nm AGNRs versus channel potential, has a non-monotonic behavior with peak values and corresponding channel potentials which are strongly dependent on the ribbon's width and edge effects.

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2014 International Semiconductor Conference (CAS)

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