3D-TSV互连用细间距Cu柱/SnAg凸点金属间生长研究

Y. Park, Jiwon Shin, Yong-Won Choi, K. Paik
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引用次数: 2

摘要

研究了3D-TSV互连中用于片与片共晶键合的细间距Cu柱/SnAg焊点的IMC生长。在共晶键合过程中,大部分SnAg焊料被Cu-Sn金属间化合物(IMC)生长迅速消耗。IMC相为Cu-Au-Sn三元相,TEM衍射图与Cu6Sn5晶体结构吻合较好,每两个强点之间的2周衍射点与Au原子的超晶格相匹配。结果表明,Cu-Au- sn三元IMCs为(Cu, Au)6Sn5。对于大型焊点,如BGA(球栅阵列)或CSP(芯片规模封装),由于相对较少的Au含量,沉积在金属焊盘上的大部分Au溶解在熔化的焊点区域。然而,当TSV Cu柱/SnAg钎料凸点连接在Au包覆的Cu衬垫上时,由于钎料量非常少,Au原子完全溶解在钎料中并参与IMC反应。
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A study on the intermetallic growth of fine-pitch Cu pillar/SnAg solder bump for 3D-TSV interconnection
The IMC growth of fine pitch Cu pillar/SnAg solder bumps used for the chip to chip eutectic bonding of 3D-TSV interconnection was investigated. Most of SnAg solder was rapidly consumed by Cu-Sn intermetallic compound (IMC) growth during the eutectic bonding process. The composition of the IMC phase were identified as Cu-Au-Sn ternary phase and the main TEM diffraction patterns were well matched with the Cu6Sn5 crystal structure and the two week diffraction spots between every two strong spots matched with the superlattice of Au atoms. As a result, it was proved that the Cu-Au-Sn ternary IMCs were (Cu, Au)6Sn5. In the case of a large solder joint such as BGA (Ball Grid Array) or CSP (Chip Scale Package), most of the Au deposited on a metal pad was dissolved in the melting solder region due to relatively little Au content. However, in the case of TSV Cu pillar/SnAg solder bump jointed on the Au coated Cu pad, Au atoms were completely dissolved in the solder and participated in the IMC reaction due to the very small amount of solder.
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