Zhesheng Chen, J. Caillaux, Jiuxiang Zhang, E. Papalazarou, Jingwei Dong, J. Rueff, A. Taleb-Ibrahimi, L. Perfetti, M. Marsi
{"title":"时间分辨ARPES的超快动力学:单硫系半导体中的光激发电子","authors":"Zhesheng Chen, J. Caillaux, Jiuxiang Zhang, E. Papalazarou, Jingwei Dong, J. Rueff, A. Taleb-Ibrahimi, L. Perfetti, M. Marsi","doi":"10.5802/CRPHYS.57","DOIUrl":null,"url":null,"abstract":"Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, n-type indium selenide and indirect band gap, p-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.","PeriodicalId":50650,"journal":{"name":"Comptes Rendus Physique","volume":"64 1","pages":"1-8"},"PeriodicalIF":1.3000,"publicationDate":"2021-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultrafast dynamics with time-resolved ARPES: photoexcited electrons in monochalcogenide semiconductors\",\"authors\":\"Zhesheng Chen, J. Caillaux, Jiuxiang Zhang, E. Papalazarou, Jingwei Dong, J. Rueff, A. Taleb-Ibrahimi, L. Perfetti, M. Marsi\",\"doi\":\"10.5802/CRPHYS.57\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, n-type indium selenide and indirect band gap, p-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.\",\"PeriodicalId\":50650,\"journal\":{\"name\":\"Comptes Rendus Physique\",\"volume\":\"64 1\",\"pages\":\"1-8\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2021-05-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Comptes Rendus Physique\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.5802/CRPHYS.57\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ASTRONOMY & ASTROPHYSICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Comptes Rendus Physique","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.5802/CRPHYS.57","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ASTRONOMY & ASTROPHYSICS","Score":null,"Total":0}
Ultrafast dynamics with time-resolved ARPES: photoexcited electrons in monochalcogenide semiconductors
Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, n-type indium selenide and indirect band gap, p-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.
期刊介绍：
The Comptes Rendus - Physique are an open acess and peer-reviewed electronic scientific journal publishing original research article. It is one of seven journals published by the Académie des sciences.
Its objective is to enable researchers to quickly share their work with the international scientific community.
The Comptes Rendus - Physique also publish journal articles, thematic issues and articles on the history of the Académie des sciences and its current scientific activity.
From 2020 onwards, the journal''s policy is based on a diamond open access model: no fees are charged to authors to publish or to readers to access articles. Thus, articles are accessible immediately, free of charge and permanently after publication.
The Comptes Rendus - Physique (8 issues per year) cover all fields of physics and astrophysics and propose dossiers. Thanks to this formula, readers of physics and astrophysics will find, in each issue, the presentation of a subject in particularly rapid development. The authors are chosen from among the most active researchers in the field and each file is coordinated by a guest editor, ensuring that the most recent and significant results are taken into account. In order to preserve the historical purpose of the Comptes Rendus, these issues also leave room for the usual notes and clarifications. The articles are written mainly in English.
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