{"title":"一种ppga系列高密度闪存","authors":"R. Lipp, R. Freeman, T. Saxe","doi":"10.1109/CICC.1996.510550","DOIUrl":null,"url":null,"abstract":"An NMOS transistor switch, direct coupled to a Flash memory cell without the use of a sense amp, is the basis for a high density FPGA. The switch is capable of transmitting the full digital switching voltage; novel circuit design techniques prevent the generation of hot electrons which would otherwise deprogram the memory during normal operation. The small programmable Flash switching element facilitates use of a fine grain architecture optimized for design techniques based upon high level design and synthesis. At 0 . 8 ~ technology, the largest member of the family is rated at 100,000 gates. Future scaling to 0 . 3 5 ~ technology will make practical a 400,000 gate device.","PeriodicalId":74515,"journal":{"name":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","volume":"69 1","pages":"239-"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A ICIGH DENSITY FLASH MEMORY PPGA FAMILY\",\"authors\":\"R. Lipp, R. Freeman, T. Saxe\",\"doi\":\"10.1109/CICC.1996.510550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An NMOS transistor switch, direct coupled to a Flash memory cell without the use of a sense amp, is the basis for a high density FPGA. The switch is capable of transmitting the full digital switching voltage; novel circuit design techniques prevent the generation of hot electrons which would otherwise deprogram the memory during normal operation. The small programmable Flash switching element facilitates use of a fine grain architecture optimized for design techniques based upon high level design and synthesis. At 0 . 8 ~ technology, the largest member of the family is rated at 100,000 gates. Future scaling to 0 . 3 5 ~ technology will make practical a 400,000 gate device.\",\"PeriodicalId\":74515,\"journal\":{\"name\":\"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference\",\"volume\":\"69 1\",\"pages\":\"239-\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1996.510550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1996.510550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An NMOS transistor switch, direct coupled to a Flash memory cell without the use of a sense amp, is the basis for a high density FPGA. The switch is capable of transmitting the full digital switching voltage; novel circuit design techniques prevent the generation of hot electrons which would otherwise deprogram the memory during normal operation. The small programmable Flash switching element facilitates use of a fine grain architecture optimized for design techniques based upon high level design and synthesis. At 0 . 8 ~ technology, the largest member of the family is rated at 100,000 gates. Future scaling to 0 . 3 5 ~ technology will make practical a 400,000 gate device.