掺硼金刚石薄膜的电化学性能

Journal of Functional Materials and Devices Pub Date : 2005-01-01 DOI:10.1149/ma2014-01/27/1131

C. Darong

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摘要

采用循环伏安法研究了掺硼金刚石薄膜电极与Pt/BDD电极的电化学性能。结果表明，掺硼金刚石薄膜电极具有宽的电化学窗口(约3V)、优异的化学稳定性和低的背景电流(接近于零)。同时，用能级理论对结果进行了分析。结果表明，掺硼金刚石薄膜是一种理想的电位电极。

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Electrochemical properties of boron-doped diamond thin-film

By cyclic voltammetry, electrochemical properties of the boron-doped diamond thin-film electrode were investigated compared with those of Pt/BDD electrode. It shows that the boron-doped diamond thin-film electrode has wide electrochemical window (approximate 3V), excellent chemical stability and low background current (near zero ). At the same time, the result was analyzed with energy level theory. All the works show that the boron-doped diamond thin film is a kind of ideal potential electrode.

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