CIGS薄膜高功率脉冲磁控溅射(HiPIMS)的发射光谱研究

J. Olejníček, Z. Hubička, M. Kohout, P. Kšírová, M. Brunclíková, Š. Kment, M. Čada, S. Darveau, C. Exstrom
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引用次数: 3

摘要

采用高功率脉冲磁控溅射(HiPIMS)或直流磁控管溅射Cu、In和Ga,制备了x = 0、0.28和1的CuIn1-xGaxSe2 (CIGS)薄膜,并在Ar+Se气氛中硒化。利用光学发射光谱(OES)监测金属前驱体溅射过程中HiPIMS和直流等离子体的差异。采用x射线衍射(XRD)、扫描电镜(SEM)、拉曼光谱(Raman spectroscopy)、能量色散x射线光谱(EDX)等技术对薄膜特性进行了测量。
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Optical emission spectroscopy of High Power Impulse Magnetron Sputtering (HiPIMS) of CIGS thin films
CuIn1-xGaxSe2 (CIGS) thin films with x = 0, 0.28 and 1 were prepared by the sputtering of Cu, In and Ga in HiPIMS (High Power Impulse Magnetron Sputtering) or DC magnetron and subsequently selenized in an Ar+Se atmosphere. Optical emission spectroscopy (OES) was used to monitor differences in HiPIMS and DC plasma during sputtering of metallic precursors. Thin film characteristics were measured using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, energy-dispersive X-ray spectroscopy (EDX) and other techniques.
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