高功率光激发下的二维WSe2薄片

K. Brekhov, S. Lavrov, A. Kudryavtsev, N. Ilyin
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引用次数: 0

摘要

准二维过渡金属二硫族化合物层是制造脉冲激光可饱和吸收剂的有希望的候选者。然而,强电磁辐射对此类结构影响的特性尚未得到深入研究。本文通过实验研究探讨了WSe2薄片中光激发载流子的动力学。这些研究发现,在高功率光泵的影响下,WSe2薄片的光学性质发生了明显的变化,可以估计这些结构的热化时间(约2 ps),并发现完全弛豫需要10 ps以上。半导体表层载流子的浓度估计约为1028 m-3。发现基于激子共振和自由载流子吸收的光学响应的标准描述模型不能充分描述实验结果。因此,为了准确地描述光响应,有必要考虑与库仑屏蔽相关的效应,这是由本实验中使用的光泵浦密度的高浓度光激发载流子引起的。
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Two-dimensional WSe2 flakes under high power optical excitation
Quasi-2D layers of transition metal dichalcogenides are promising candidates for creating saturable absorbers for pulsed lasers. However, the peculiarities of intense electromagnetic radiation’s influence on such structures have not been thoroughly studied. This paper explores the dynamics of photoexcited carriers in WSe2 flakes through experimental studies. These studies found that WSe2 flakes significantly change their optical properties under the influence of a high-power optical pump, allowed estimating the thermalization time of these structures (about 2 ps), and found that full relaxation takes more than 10 ps. The concentration of carriers in the semiconductor surface layer was estimated to be about 1028 m–3. It was found that standard description models of the optical response based on exciton resonances and absorption by free carriers could not adequately describe the experiments’ results. Thus, for an accurate description of the optical response, it was necessary to consider the effects associated with Coulomb screening that are caused by the high concentration of photo-excited carriers of the optical pumping densities used in this experiment.
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