A. Hagerstrom, E. Marksz, C. Long, J. Booth, I. Takeuchi, N. Orloff
{"title":"数十GHz频段铁电材料的频率和电场相关物理模型","authors":"A. Hagerstrom, E. Marksz, C. Long, J. Booth, I. Takeuchi, N. Orloff","doi":"10.1109/IMWS-AMP.2018.8457148","DOIUrl":null,"url":null,"abstract":"Ferroelectric materials are attractive for tunable components because their permittivity can be controlled by an applied electric field. The permittivity of these materials also depends on frequency, and can have a strongly nonlinear electric field dependence. A quantitative understanding of these behaviors is relevant for integration of tunable materials into devices. In this paper, we provide a simple closed-form expression for this dependence, which to our knowledge has never appeared in the literature. This expression is based on thermodynamic principles, and we expect it to be both widely applicable and generalizable. We test this model with measurements of transmission lines lithographically patterned on a ferroelectric thin film, and find that the relaxation timescales become shorter at higher bias fields. We attribute this faster relaxation to the steepening of the free energy gradient when a bias field is applied.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"56 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Frequency- and Electric Field-Dependent Physical Model of Ferroelectric Materials in the Tens of GHz\",\"authors\":\"A. Hagerstrom, E. Marksz, C. Long, J. Booth, I. Takeuchi, N. Orloff\",\"doi\":\"10.1109/IMWS-AMP.2018.8457148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ferroelectric materials are attractive for tunable components because their permittivity can be controlled by an applied electric field. The permittivity of these materials also depends on frequency, and can have a strongly nonlinear electric field dependence. A quantitative understanding of these behaviors is relevant for integration of tunable materials into devices. In this paper, we provide a simple closed-form expression for this dependence, which to our knowledge has never appeared in the literature. This expression is based on thermodynamic principles, and we expect it to be both widely applicable and generalizable. We test this model with measurements of transmission lines lithographically patterned on a ferroelectric thin film, and find that the relaxation timescales become shorter at higher bias fields. We attribute this faster relaxation to the steepening of the free energy gradient when a bias field is applied.\",\"PeriodicalId\":6605,\"journal\":{\"name\":\"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"volume\":\"56 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-AMP.2018.8457148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2018.8457148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Frequency- and Electric Field-Dependent Physical Model of Ferroelectric Materials in the Tens of GHz
Ferroelectric materials are attractive for tunable components because their permittivity can be controlled by an applied electric field. The permittivity of these materials also depends on frequency, and can have a strongly nonlinear electric field dependence. A quantitative understanding of these behaviors is relevant for integration of tunable materials into devices. In this paper, we provide a simple closed-form expression for this dependence, which to our knowledge has never appeared in the literature. This expression is based on thermodynamic principles, and we expect it to be both widely applicable and generalizable. We test this model with measurements of transmission lines lithographically patterned on a ferroelectric thin film, and find that the relaxation timescales become shorter at higher bias fields. We attribute this faster relaxation to the steepening of the free energy gradient when a bias field is applied.