{"title":"CdO-CuO薄膜异质结输运性质研究","authors":"C. Debnath, K. L. Bhowmi, B. Sah","doi":"10.1109/ICANMEET.2013.6609347","DOIUrl":null,"url":null,"abstract":"Thin film of CuO and CdO were prepared for making heterojunction. The films were prepared by radio frequency magnetron sputtering technique. The junction shows outstanding electrical properties and particularly the electrical properties of CuO were found to be highly effected and enhanced. Carrier diffusion and carrier tunnelling through the interface potential lead to the outstanding electrical properties of the heterojunction. These types of heterostructures are potential candidate for different device applications such as field emission display and optoelectronic devices.","PeriodicalId":13708,"journal":{"name":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","volume":"28 1","pages":"499-501"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Studies on transport properties of CdO-CuO thin film hetero junction\",\"authors\":\"C. Debnath, K. L. Bhowmi, B. Sah\",\"doi\":\"10.1109/ICANMEET.2013.6609347\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin film of CuO and CdO were prepared for making heterojunction. The films were prepared by radio frequency magnetron sputtering technique. The junction shows outstanding electrical properties and particularly the electrical properties of CuO were found to be highly effected and enhanced. Carrier diffusion and carrier tunnelling through the interface potential lead to the outstanding electrical properties of the heterojunction. These types of heterostructures are potential candidate for different device applications such as field emission display and optoelectronic devices.\",\"PeriodicalId\":13708,\"journal\":{\"name\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"volume\":\"28 1\",\"pages\":\"499-501\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICANMEET.2013.6609347\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICANMEET.2013.6609347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Studies on transport properties of CdO-CuO thin film hetero junction
Thin film of CuO and CdO were prepared for making heterojunction. The films were prepared by radio frequency magnetron sputtering technique. The junction shows outstanding electrical properties and particularly the electrical properties of CuO were found to be highly effected and enhanced. Carrier diffusion and carrier tunnelling through the interface potential lead to the outstanding electrical properties of the heterojunction. These types of heterostructures are potential candidate for different device applications such as field emission display and optoelectronic devices.
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