{"title":"一种降低电荷损耗的新型嵌入式闪存的可靠性研究","authors":"Lingling Shao, Y. Zhao, Wei Han, W. Chien","doi":"10.1109/CSTIC.2017.7919738","DOIUrl":null,"url":null,"abstract":"We investigated the mechanism of read stress and standby with power-on after more than 20 program/erase cycles, which cause conventional embedded flash memory read “0” fail. To solve this, a new e-flash with reversed drain-source cell device was introduced. In this paper, we studied the reliability performance of conventional and the new e-flash. Experimental results proved that the newly designed e-flash exhibits superior performance in terms of data retention, endurance, and the potential at multilevel operations.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A reliability study of a new embedded flash to reduce charge-loss issue\",\"authors\":\"Lingling Shao, Y. Zhao, Wei Han, W. Chien\",\"doi\":\"10.1109/CSTIC.2017.7919738\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the mechanism of read stress and standby with power-on after more than 20 program/erase cycles, which cause conventional embedded flash memory read “0” fail. To solve this, a new e-flash with reversed drain-source cell device was introduced. In this paper, we studied the reliability performance of conventional and the new e-flash. Experimental results proved that the newly designed e-flash exhibits superior performance in terms of data retention, endurance, and the potential at multilevel operations.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"23 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919738\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A reliability study of a new embedded flash to reduce charge-loss issue
We investigated the mechanism of read stress and standby with power-on after more than 20 program/erase cycles, which cause conventional embedded flash memory read “0” fail. To solve this, a new e-flash with reversed drain-source cell device was introduced. In this paper, we studied the reliability performance of conventional and the new e-flash. Experimental results proved that the newly designed e-flash exhibits superior performance in terms of data retention, endurance, and the potential at multilevel operations.
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