Vishal Jain Manjunath, Andrew Rush, Abhijeet Barua, Rashmi Jha
{"title":"铝界面层对氧化铌基电阻式RAM的影响","authors":"Vishal Jain Manjunath, Andrew Rush, Abhijeet Barua, Rashmi Jha","doi":"10.1016/j.ssel.2019.09.001","DOIUrl":null,"url":null,"abstract":"<div><p>Resistive RAM (Random Access Memory) has good scalability with high switching speed and low operating voltage making it one of the promising emerging nonvolatile memory technologies. Interfacial layer between the electrode and metal-oxide interface in a Resistive RAM (ReRAM) could either enhance or deteriorate the switching performance of the device. In this study, we investigate the role of aluminum (Al) as an interfacial layer under the top electrode (TE) layer in a niobium oxide (Nb<sub>2</sub>O<sub>5</sub>) based ReRAM. We compare the Current-Voltage (I-V), Capacitance-Voltage (C-V) characteristics and endurance of the Nb<sub>2</sub>O<sub>5</sub> based ReRAM with an Al interfacial layer below the tungsten (W) TE and a control sample without the Al interfacial layer to contrast the performance of each type. Additionally, we connect the tested device behavior with the enthalpy, entropy, and Gibb's free energy to illustrate that aluminum is an inefficient interfacial layer in the niobium oxide ReRAM.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"1 2","pages":"Pages 52-57"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2019.09.001","citationCount":"4","resultStr":"{\"title\":\"Effect of aluminum interfacial layer in a niobium oxide based resistive RAM\",\"authors\":\"Vishal Jain Manjunath, Andrew Rush, Abhijeet Barua, Rashmi Jha\",\"doi\":\"10.1016/j.ssel.2019.09.001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Resistive RAM (Random Access Memory) has good scalability with high switching speed and low operating voltage making it one of the promising emerging nonvolatile memory technologies. Interfacial layer between the electrode and metal-oxide interface in a Resistive RAM (ReRAM) could either enhance or deteriorate the switching performance of the device. In this study, we investigate the role of aluminum (Al) as an interfacial layer under the top electrode (TE) layer in a niobium oxide (Nb<sub>2</sub>O<sub>5</sub>) based ReRAM. We compare the Current-Voltage (I-V), Capacitance-Voltage (C-V) characteristics and endurance of the Nb<sub>2</sub>O<sub>5</sub> based ReRAM with an Al interfacial layer below the tungsten (W) TE and a control sample without the Al interfacial layer to contrast the performance of each type. Additionally, we connect the tested device behavior with the enthalpy, entropy, and Gibb's free energy to illustrate that aluminum is an inefficient interfacial layer in the niobium oxide ReRAM.</p></div>\",\"PeriodicalId\":101175,\"journal\":{\"name\":\"Solid State Electronics Letters\",\"volume\":\"1 2\",\"pages\":\"Pages 52-57\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.ssel.2019.09.001\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589208819300195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208819300195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of aluminum interfacial layer in a niobium oxide based resistive RAM
Resistive RAM (Random Access Memory) has good scalability with high switching speed and low operating voltage making it one of the promising emerging nonvolatile memory technologies. Interfacial layer between the electrode and metal-oxide interface in a Resistive RAM (ReRAM) could either enhance or deteriorate the switching performance of the device. In this study, we investigate the role of aluminum (Al) as an interfacial layer under the top electrode (TE) layer in a niobium oxide (Nb2O5) based ReRAM. We compare the Current-Voltage (I-V), Capacitance-Voltage (C-V) characteristics and endurance of the Nb2O5 based ReRAM with an Al interfacial layer below the tungsten (W) TE and a control sample without the Al interfacial layer to contrast the performance of each type. Additionally, we connect the tested device behavior with the enthalpy, entropy, and Gibb's free energy to illustrate that aluminum is an inefficient interfacial layer in the niobium oxide ReRAM.
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