M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac
{"title":"多量子阱结构中阱放电过程的建模","authors":"M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac","doi":"10.1109/SMICND.2008.4703332","DOIUrl":null,"url":null,"abstract":"The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of trap discharging processes in Multiple Quantum Well structures\",\"authors\":\"M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac\",\"doi\":\"10.1109/SMICND.2008.4703332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703332\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of trap discharging processes in Multiple Quantum Well structures
The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
