雪崩击穿条件下门控二极管的广义直流特性

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI:10.1109/SMICND.2008.4703321

A. Rusu, M. Badila, C. Bulucea

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引用次数: 3

摘要

本文认为门控二极管是一种兼具模拟和数字功能的器件。这种行为在器件的击穿状态中会遇到，其中传输特性在很大范围内具有斜率，从线性区域到崩溃区域。该特性的形式取决于作为参考的电极。理论模型和实验测量证明了这些假设。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Generalised DC characteristics of gate-controlled diodes in avalanche breakdown regime

This paper considers the gate-controlled diode as a device performing both analog and digital functions. This behavior is encountered in the breakdown regime of the device, where the transfer characteristic has slopes in a wide range, from a cvasilinear to a collapse region. The form of this characteristic depends on the electrode that is considered as reference. Theoretical models and experimental measurements demonstrate these assumptions.

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2008 IEEE International Conference on Semiconductor Electronics

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